In the electronics industry, Field Effect Transistors (FETs) are crucial semiconductor devices that alter the output current by controlling the input voltage. One primary type of FET is the Metal-Oxide Semiconductor Field Effect Transistor (MOSFET). MOSFETs are renowned for their low power consumption, high switching speeds, and high integration levels, making them widely used in communications, industrial control, consumer electronics, and numerous other fields. This article will delve into the key specifications and characteristics of a MOSFET product, BSS84PH6433XTMA1.
BSS84PH6433XTMA1 is a MOSFET product manufactured by Infineon, a global leader in semiconductor companies. Infineon's products have extensive applications in automotive electronics, power management, industrial automation, and more. BSS84PH6433XTMA1 is a P-channel MOSFET characterized by its small size, low power consumption, and stable performance, suitable for various circuit designs and application needs.
Package and Dimensions
Package Type: SOT-23-3, a common surface-mount package known for its small size and ease of integration.
Dimensions: Approximately 2.90mm x 1.30mm x 1.02mm (or similar), suitable for compact electronic device designs.
Electrical Characteristics
Threshold Voltage (Vgs(th)): 2V @ 20uA, the gate-source voltage required for the P-channel MOSFET to begin conducting.
Drain-Source Voltage (Vdss): 60V, the maximum drain-source voltage the MOSFET can withstand.
Continuous Drain Current (Id): 170mA, the current the MOSFET can continuously pass under normal operating conditions.
On-Resistance (Rds(on)): 8 ohms @ 170mA, 10V, the on-resistance of the MOSFET that affects power consumption and efficiency.
Gate-Source Breakdown Voltage (Vgs(max)): ±20V, the maximum voltage the gate-source can withstand.
Power and Temperature
Power Dissipation (Pd): 360mW, the power the MOSFET can dissipate under normal operating conditions.
Operating Temperature: -55°C to +150°C, the temperature range within which the MOSFET can operate normally.
Other Parameters
Reverse Transfer Capacitance (Crss): 3pF (or similar), affecting the MOSFET's switching speed and frequency response.
Gate Charge (Qg): 1.5nC @ 10V, indicating the gate charge that affects switching speed.
Package Material: RoHS compliant, indicating the product does not contain certain harmful substances and meets environmental standards.
III. Product Characteristics
High Performance
BSS84PH6433XTMA1 features low on-resistance and high switching speeds, providing stable and efficient current control.
Low Power Consumption
Due to its low on-resistance, the MOSFET consumes less power under normal operating conditions, contributing to longer battery life and reduced heat generation.
High Integration
The SOT-23-3 package makes BSS84PH6433XTMA1 easy to integrate into small electronic devices, meeting the compact design requirements of modern electronics.
Reliability
The product undergoes rigorous quality control and can operate stably within a wide temperature range, suitable for various harsh environments.
Environmentally Friendly
Compliant with RoHS standards, the product meets the environmental requirements of modern electronics, contributing to reduced environmental impact.
With its high performance, low power consumption, and high integration, BSS84PH6433XTMA1 is suitable for various application scenarios. For example, in communication modules, MOSFETs can be used for signal amplification and switching; in industrial control, they can be used for motor drives and power management; in consumer electronics, they can be used for battery management and LED driving.
In summary, BSS84PH6433XTMA1, as a high-performance P-channel MOSFET product, boasts excellent electrical characteristics, low power consumption, high integration, and reliability. Its wide range of applications makes it an indispensable component in modern electronic design. By deeply understanding the key specifications and characteristics of BSS84PH6433XTMA1, designers can better select and apply this product to meet the design requirements of various electronic devices.
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